Anterwell Technology Ltd.
Large Original stock of IC Electronics Components, Transistors, Diodes etc.
High Quality, Reasonable Price, Fast Delivery.
Product Details:
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Drain-Source Voltage: | +7 V | Gate-Source Voltage: | -4 V |
---|---|---|---|
Gate-Drain Voltage: | -8 V | Power Dissipation: | 275 MW |
Channel Temperature: | 175 °C | Storage Temperature: | -65 To +150 °C |
High Light: | power mosfet ic,multi emitter transistor |
2–16 GHz General Purpose Gallium Arsenide FET
ATF-26884
Features
• High Output Power: 18.0 dBm Typical P 1 dB at 12 GHz
• High Gain: 9.0 dB Typical GSS at 12 GHz
• Low Cost Plastic Package
• Tape-and-Reel Packaging Option Available[1]
Description
The ATF-26884 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. This device is designed for use in oscillator applications and general purpose amplifier applications in the 2-16␣ GHz frequency range.
This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250␣ microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.
84 Plastic Package
ATF-26884 Absolute Maximum Ratings
Symbol | Parameter | Units | Absolute Maximum[1] |
---|---|---|---|
VDS | Drain-Source Voltage | V | +7 |
VGS | Gate-Source Voltage | V | -4 |
VGD | Gate-Drain Voltage | V | -8 |
IDS | Drain Current | mA | IDSS |
PT | Power Dissipation[2,3] | mW | 275 |
TCH | Channel Temperature | °C | 175 |
TSTG | Storage Temperature | °C | -65 to +150 |
Thermal Resistance: θjc = 300°C/W; TCH = 150°C Liquid Crystal Measurement: 1 µm Spot Size[4] |
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE TEMPERATURE = 25°C.
3. Derate at 3.3 mW/°C for TCASE > 92.5°C.
4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section for more information.
Stock Offer (Hot Sell)
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