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N - Channel Logic Level Enhancement Mode Field Effect Transistor P0903BDL

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N - Channel Logic Level Enhancement Mode Field Effect Transistor P0903BDL

: Large Image : N - Channel Logic Level Enhancement Mode Field Effect Transistor P0903BDL

Product Details:

Place of Origin:	Original
Brand Name:	Original
Certification:	Original Factory Pack
Model Number:	P0903BDL

Payment & Shipping Terms:

Minimum Order Quantity:	5pcs
Price:	Negotiation
Packaging Details:	please contact me for details
Delivery Time:	1 Day
Payment Terms:	T/T, Western Union,PayPal
Supply Ability:	290PCS

Contact Now

Detailed Product Description

Gate-Source Voltage:	20 V	Continuous Drain Current:	50 A
Pulsed Drain Current1:	200 A	Operating Junction & Storage Temperature Range:	-55 To 150 °C
Lead Temperature (1 /16” From Case For 10 Sec.):	275 °C
High Light:	multi emitter transistor , silicon power transistors

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current	I_S			50	A
Pulsed Current³	I_SM			150	A
Forward Voltage¹	V_SD	I_S = 25A, V_GS = 0V	0.9	1.3	V
Reverse Recovery Time	t_rr	I_F= I_S, dlF/dt = 100A / µS	70		nS
Peak Reverse Recovery Current	IRM(REC)		200		A
Reverse Recovery Charge			0.043		µC

TYPICAL CHARACTERISTICS

Tag:

mosfets irf3205,

multi emitter transistor,

silicon power transistors

Contact Details

Anterwell Technology Ltd.

Contact Person: Miss. Sharon Yang

Tel: 86-755-61169882

Fax: 86-755-613169859

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